tcb: TSMC (Taiwan Semiconductor Manufacturing Company) Custom Block.
n28: 28nm process technology.
hpc: High Performance Compact.
plus: Enhanced version of the standard library.
bwp: Body Bias Well Process.
12t: 12-track standard cell height.
40p140: 40nm minimum poly length, 140nm poly to poly pitch (Horizon Pin Grid)
lvt: Low Voltage Threshold (LVT) transistors
180a: Specific version or variant identifier, possibly indicating a particular configuration or update.
All the Standard cells are in equal in height and varying width. Main characteristics of a standard cell have been explained with the help of the following figure.
At the top of the standard cell, there is VDD rail and bottom there is a VSS rail. Both the Power rails are drawn in the Metal-1 layer. In between the VDD rail and VSS rail there are three main regions, a nwell region, a gap of nwell and pwell and pwell region. nwell region is near to the VDD rail and pwell region is near the VSS rail. PMOS transistors are build inside the nwell, so all the PMOS transistors are in the top half of the cell and similarly, all NMOS are in the bottom half of the standard cell.
Layout of a schematic can be drawn in various ways. For example layout of a NAND gate can be drawn in following two different styles.
Left-Figure is showing the schematic of a NAND gate and Mid-Figure and Right-Figure showing two different layouts of the schematic shown in the figure. In Mid-Figure both the NMOS are in not the same level, they are stacked but in the layout of Right-Figure all NMOS are in one level and all PMOS are at one level. And in Mid gates are drawn horizontal and not common in NMOS and PMOS. But in Right-Figure, all the poly gates are drawn vertical and common to NMOS and PMOS both.
There are many reasons for preferring a layout style like in Right-Figure. Some of them are:
Track can be defined as a line on which metal layers are drawn. A track means one M1 Pitch. Height of Standard cell is generally measured in term of no. of tracks inside it. like a 6T standard cell means that the height of the standard cell is 6 Track of M1. An example of 13T standard cell is given below:
In the above example, the height of one track is 190 nm. So total height of cell is 13T = 2470 nm (13 x 190) and width is 5T = 950 nm (5 x 190).
Generally, there are various sets of standard cell library having different track size of standard cells. Depending on the use of ASIC, track height a standard library has selected. There are generally three sets of standard cell library characterized as small transistor standard cell, large transistors standard cell and medium transistor standard cell. An example for 6T, 12T and 9T size standard cells are shown below.
Small transistor standard cells are used for high-density design and these cells having low power consumption. Large transistors standard cells large area but having very good performance. Medium transistors standard cells have a balance between large transistors and small transistors. So there is a tradeoff between area/power vs performance. A comparison has been shown below.
Various applications of these cells are as bellow:
Small transistor cells (6T Cells)
Large transistors cells (12T Cells)
Medium transistors cells (9T Cells)