¶ 1 LOD (STI应力)
其实这个只是Sress Effect中的一环，由于隔离STI引起的应力的效应。
电流镜按照multiply画法的器件，每个器件之间都有STI吗？是的，在版图中，其实DIFF的边缘，就是STI的边缘。由于应变硅技技术的应用，一个结论是越挤压，NMOS的电流越大，而PMOS的电流越小（具体有待验证，理论可以参见温德通《集成电路制造工艺与工程技术》的第二章）。
BSIM4 4.8.1 MOSFET Model, page 115
CMOS feature size aggressively scaling makes shallow trench isolation(STI) very popular active area isolatiohn process in advanced technologies. Recent years, strain channel materials have been employed to achieve high device performance. The mechanical stress effect induced by these process causes MOSFET performance function of the active area size(OD: oxide definition) and the location of the device in the active area. And the necessity of new models to describe the layout dependence of MOS parameters due to stress effect becomes very urgent in advance CMOS technologies.
LOD效应同时影响”载流子速度”和“阈值电压”，这里就不去列公式了。具体可以查看BSIM4的手册
BSIM4 4.8.1 MOSFET Model, page 115
Experimental analysis show that there exist at least two different mechanisms within the influence of stress effect on device characteristics. The first one is mobility-related and is induced by the band structure modification. The second one is Vth-related as a result of doping profile variation. Both of them follow the same 1/LOD trend but reveal different L and W scaling. We have derived a phenomenological model based on these findings by modifying some parameters in the BSIM model. Note that the following equations have no impact on the iteration time because there are no voltage-controlled components in them.
缩写LOD应该是Length Gate Oxide 的缩写, 简单规则的OD区中SA,SB的计算，对于不规则的OD形状下等效SA,SB如何让计算，在BSIM4中也有详细描述。
BSIM4 4.8.1 MOSFET Model, page 116
SA, SB are the distances between isolation edge to Poly from one and the other side, respectively. 2D simulation shows that stress distribution can be expressed by a simple function of SA and SB.
¶ 2 WPE (井临效应)
Well Proximity Effect主要影响阈值电压，载流子速度和衬底效应
BSIM4 considers the influence of well proximity effect on threshold voltage,mobility, and body effect.
SCA,SCB,SCC是井参杂散射积分的不同阶数
where SCA, SCB, SCC are instance parameters that represent the integral of the first/second/third distribution function for scattered well dopant.
在TSMC中，计算WPE的方式，也可以通过LDE-preset的方式，LDE for Layout Dependent Effiect。分别设置GATE到井边缘的距离，或者是GATE到OD2隔离环的距离
¶ 3 DIFF Parameter
这些包含在BSIM4中的 Chapter 12: Layout-Dependent ParasiticsModel 中，主要是：
- Effective Junction Perimeter and Area
- Source/Drain Diffusion Resistance
| Parameter | Defination |
|---|---|
| AS | source area |
| AD | drain area |
| PS | source periphery |
| PD | drain periphery |
| NRS | number of quares source resistance |
| NRD | number of quares drain resistance |
¶ 4 寄生电容
以下结果是通过提取简单的calibre的结果，直接观测总结出的。
上下层金属寄生电容
| Cap | Width | Length | Calibre | Value | Unit |
|---|---|---|---|---|---|
| M1-M2 | 100 | 100 | 402.322 | 0.0402322 | fF/um^2 |
| M1-M3 | 100 | 100 | 153.124 | 0.0153124 | fF/um^2 |
| M1-M4 | 100 | 100 | 91.481 | 0.0091481 | fF/um^2 |
| M3-M4 | 100 | 100 | 349.68 | 0.034968 | fF/um^2 |
同层M1-4K寄生4K(不同间距)
| Cap | Distance | Width | Length | Calibre | Value | Unit |
|---|---|---|---|---|---|---|
| M1-M1 | 1um | 1 | 100 | 3.77555 | 0.0377555 | fF/um |
| M1-M1 | 0.5um | 1 | 100 | 6.80204 | 0.0680204 | fF/um |
| M1-M1 | 0.38um | 1 | 100 | 8.47875 | 0.0847875 | fF/um |
同层M4-8K寄生(不同间距)
| Cap | Distance | Width | Length | Calibre | Value | Unit |
|---|---|---|---|---|---|---|
| M4-M4 | 1um | 1 | 100 | 7.54685 | 0.0754685 | fF/um |
| M4-M4 | 0.5um | 1 | 100 | 12.4866 | 0.124866 | fF/um |
| M4-M4 | 0.38um | 1 | 100 | 13.3038 | 0.133038 | fF/um |
对SUB的寄生，其实包含侧壁电容+直接电容，2*(W+L)*Cp + W*L*Ca，利用以下结果列方程求解
| Cap | Width | Length | Calibre | Cap | Value | Unit |
|---|---|---|---|---|---|---|
| M1-SUB | 1 | 10000 | 1184.06 | /area | 0.0318971 | fF/um^2 |
| M1-SUB | 100 | 100 | 336.271 | /perimeter | 0.0432501 | fF/um |
M1对POLY的寄生，也包含侧壁电容+直接电容，2*(W+L)*Cp + W*L*Ca，利用以下结果列方程求解
| Cap | Width | Length | Calibre | Cap | Value | Unit |
|---|---|---|---|---|---|---|
| M1-POLY | 1 | 10000 | 1781.49 | /area | 0.0708327 | fF/um^2 |
| M1-POLY | 100 | 100 | 729.788 | /perimeter | 0.0536528 | fF/um |
POLY对SUB的寄生，也包含侧壁电容+直接电容，2*(W+L)Cp + W*L*Ca，利用以下结果列方程求解
| Cap | Width | Length | Calibre | Cap | Value | Unit |
|---|---|---|---|---|---|---|
| POLY-SUB | 21 | 10000 | 19109.4 | /area | 0.0864063 | fF/um^2 |
| POLY-SUB | 120 | 120 | 1267.34 | /perimeter | 0.0481029 | fF/um |
¶ 5 寄生电阻
以下结果是通过提取简单的calibre的结果，直接观测总结出的。
| Type | Thinkness | Size | Square Resistance |
|---|---|---|---|
| M1-Mn | 4k | 78mΩ/square | |
| Mt | 8k | 36mΩ/square | |
| VIA12 | 4k-4k | 0.26um * 0.26um | 6.4Ω/VIA |
| VIA34 4K-8K | 4K-8K | 0.36um * 0.36um | 2.54Ω/VIA |