TSMC-180nm-BCD-MASK-Sequence

	Mask ID	Ver.	Mask Name
1	112	A	BURIED-N-IMP	NBL	N+ Buried Layer
2	120	A	OD1-ETCH	OD	Thin oxide for device and interconnection（1.8V器件）
3	121	A	ODR-ETCH	ODR	Reverse thin oxide 不存在BIG OD 或者OD Density < 65% 时可以不使用ODR T-000-CV-DR-004, Version=0.3
4	19C	A	WELL-P-DEEP-IMP	DPW	Deep P-Well
5	191	A	WELL-P-IMP		1.8V P-Well
6	193	A	WELL-P-I/O-IMP		5V P-Well
7	192	A	WELL-N-IMP		1.8V N-Well
8	194	A	WELL-N-I/O-IMP		5V N-Well
9	11A	A	DDD-P-IMP	PDD	Double Diffusion Drain
10	11B	A	DDD-N-IMP	NDD	Double Diffusion Drain
11	132	A	OD2-ETCH		Thick oxide for device
12	143	A	PBODY-ETCH	HVPB	p-body for NLDMOS
13	130	A	POLY-GATE-ETCH	PO	Poly for device and interconnection
14	114	A	LDD-N-CORE-IMP	N2V	5V Lightly Doped Drain
15	113	A	LDD-P-CORE-IMP	P2V	5V Lightly Doped Drain
16	115	A	LDD-P-I/O-IMP	N5V	1.8V Lightly Doped Drain
17	116	A	LDD-N-I/O-IMP	P5V	1.8V Lightly Doped Drain
18	198	A	S/D-N-IMP	NP	N+ implantation
19	197	A	S/D-P-IMP	PP	P+ implantation
20	155	A	RPO-ETCH	RPO	Salicide protection
21	156	A	CONTACT-METAL-ETCH	CO	contact window from M1 to OD or PO
22	160	A	METAL1-ETCH
23	183	A	HRM1-SICR-ETCH		Thin Film Resistor，材料为 SiCr，做在M1/M2之间，通过VIA12到M2引出
24	167	A	HRM2-SICR-ETCH		Thin Film Resistor，需要2层Mask
25	178	A	VIA1-ETCH
26	180	A	METAL2-ETCH
27	179	A	VIA2-ETCH
28	181	A	METAL3-ETCH
29	173	A	VIA3-ETCH
30	184	A	METAL4-ETCH
31	174	A	VIA4-ETCH
32	182	A	CAPACITOR-MET-TOP-ETCH		capacitor top metal
33	185	A	METAL5-ETCH
34	107	A	PASSIVATION-PAD-ETCH		Passivation pad opening
35	009	A	POLYIMIDE-NEGATIVE-PHO		Polymide Window for

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